Categories: Science and Technology

IIT-Mandi develops high-speed magnetic RAM

Indian Institute of Technology (IIT) Mandi, Himachal Pradesh has developed a high-speed magnetic Random Access Memory (RAM). This Magnetic Random Access Memory (RAM), is faster, energy-efficient and stores more data in a smaller volume as compared to existing data storage technologies.

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Important facts of Magnetic Random Access Memory (RAM):

The Spin-transfer torque (STT) based nano spintronic device is expected to put an end to computer data loss due to interruptions of power supply.
This technology will have the capability to transform next-generation computers, smartphones, and other gadgets.
In magnetic RAMs, data are represented as the spin of electrons.
In magnetic RAMs uses spintronic technology and utilizes the spin of the electrons to transmit and process information, unlike normal electronic devices that are driven by electron charges.
It harnesses the spin of electrons and manipulates the magnetic state leads to what is known as Spin-Transfer Torque-Magnetic Random Access Memory (STT-MRAM).

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Sumit Arora

As a team lead and current affairs writer at Adda247, my role involves researching and creating informative and engaging content aimed at helping candidates prepare for national and state-level competitive government exams. I specialize in delivering insightful articles that keep aspirants updated on the latest current affairs trends and developments. My primary focus is on educational excellence, ensuring that our readers are well-prepared and informed to face their exams with confidence. Through meticulously crafted content, I aim to guide and support candidates in their journey toward success.