Current Affairs   »   Science & Technology Current Affairs 2022   »   Samsung created fastest graphics DRAM chip...

Samsung created fastest graphics DRAM chip in the world

Samsung announced the creation of a new graphics dynamic random-access memory (DRAM) chip with increased speed and power efficiency. According to a statement from the manufacturer, the 24-gigabit Graphics Double Data Rate 6 (GDDR6) uses third-generation, 10-nanometer technology and boasts a data processing speed that is over 30% quicker than competing products.

Buy Prime Test Series for all Banking, SSC, Insurance & other exams

Key Points:

  • The new DRAM chip, which Samsung claims to be the fastest in the world, can process visual images at a pace of up to 1.1 terabytes per second, which is the same as processing 275 full HD movies in a second.
  • Graphics DRAMs are frequently found in powerful 3D games, personal computers, laptops, and equipment that plays high-resolution videos.
  • The new chip will likely be quickly adopted by the graphics and artificial intelligence industries because it complies with JEDEC industry standards.
  • A semiconductor organisation in charge of chip standardisation is the JEDEC Solid State Technology Association.
  • According to Samsung, the GDDR6 DRAM also increases power efficiency by more than 20% thanks to the so-called dynamic voltage scaling technology.
  • The world’s largest manufacturer of memory chips, Samsung, suffered a decline in DRAM sales in the first three months of the year for a second quarter due to weaker prices and other factors, but the business was able to maintain its leadership in the global market.

Important Takeaways for All Competitive Exams:

  • Samsung Founder: Lee Byung-chul
  • Samsung Chairman: Lee Kun-hee

More Sci-Tech News Here

Samsung created fastest graphics DRAM chip in the world_50.1

Samsung created fastest graphics DRAM chip in the world_60.1

Thank You, Your details have been submitted we will get back to you.

Leave a comment

Your email address will not be published. Required fields are marked *